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M48T512Y fiches techniques PDF

ST Microelectronics - 4 Mbit (512 Kbit x 8) TIMEKEEPER SRAM

Numéro de référence M48T512Y
Description 4 Mbit (512 Kbit x 8) TIMEKEEPER SRAM
Fabricant ST Microelectronics 
Logo ST Microelectronics 





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M48T512Y fiche technique
M48T512Y
M48T512V
5.0 or 3.3 V, 4 Mbit (512 Kbit x 8) TIMEKEEPER® SRAM
Not recommended for new design
Features
Integrated ultra low power SRAM, real-time
clock, power-fail control circuit, battery, and
crystal
)BCD coded year, month, day, date, hours,
t(sminutes, and seconds
cAutomatic power-fail chip deselect and WRITE
uprotection
rodWRITE protect voltages:
(VPFD = power-fail deselect voltage)
P– M48T512Y: VCC = 4.5 to 5.5 V;
te4.2 V VPFD 4.5 V
le– M48T512V: VCC = 3.0 to 3.6 V;
so2.7 V VPFD 3.0 V
bConventional SRAM operation; unlimited
OWRITE cycles
-Software controlled clock calibration for high
t(s)accuracy applications
10 years of data retention and clock operation
ucin the absence of power
dPin and function compatible with industry
rostandard 512 K x 8 SRAMS
PSelf-contained battery and crystal in DIP
tepackage
leRoHS compliant
Obso– Lead-free second level interconnect
32
1
PMDIP32 module
June 2011
Doc ID 5747 Rev 7
This is information on a product still in production but not recommended for new designs.
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www.st.com
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