M39432-10VNC6T Datasheet PDF - ST Microelectronics
| Part Number | M39432-10VNC6T | |
| Description | Single Chip 4 Mbit Flash Memory and 256 Kbit Parallel EEPROM | |
| Manufacturers | ST Microelectronics | |
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There is a preview and M39432-10VNC6T download ( pdf file ) link at the bottom of this page. Total 28 Pages | ||
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M39432
Single Chip 4 Mbit Flash Memory and
256 Kbit Parallel EEPROM
s Multiple Memories on a Single Chip:
– 4 Mbit Flash Memory (organised as 8 sectors)
– 256 Kbit EEPROM
– 64 Byte One Time Programmable Memory
s CONCURRENT Mode (Read Flash while
writing to EEPROM)
s WRITE, PROGRAM and ERASE Status Bits
s 2.7V to 3.6V Single Supply Voltage for
PROGRAM, ERASE and READ Operations
s 100 ns Access Time (Flash and EEPROM
blocks)
s Low Power Consumption
– 60 µA Stand-by mode (maximum)
– Deep Power Down mode:
6 µA (maximum), 200 nA (typical)
s Standard Flash Memory Package
s 100,000 Erase/Write Cycles (minimum)
s 10 Year Data Retention (minimum)
DESCRIPTION
The M39432 is a single supply voltage memory
device combining Flash memory and EEPROM on
a single chip. The memory is mapped in two
Table 1. Signal Names
A0-A18
Address Inputs
DQ0-DQ7
Data Inputs / Outputs
EE EEPROM Block Enable
EF Flash Block Enable
G Output Enable
W Write Enable
R/B Ready/Busy Output
VCC Supply Voltage
VSS Ground
TSOP40 (NC)
10 x 20 mm
Figure 1. Logic Diagram
VCC
19
A0-A18
W
EE
EF
G
M39432
8
DQ0-DQ7
R/B
VSS
AI01946
November 1999
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M39432
Table 4. Instructions 1
Instruction EE EF Cycle 1
Cycle 2
Cycle 3
Cycle 4
Cycle 5 Cycle 6 Cycle 7
Read
Manufacturer
Identifier 2
1
0
AAh 55h
@5555h @2AAAh
90h
@5555h
Read Identifier
with (A0,A1,A6)
set to (0,0,0)
Read Flash
Identifier 2
1
0
AAh 55h
@5555h @2AAAh
90h
@5555h
Read Identifier
with (A0,A1,A6)
set to (1,0,0)
Read OTP Row
0
1
AAh 55h 90h
@5555h @2AAAh @5555h
Read
Byte 1
Read
Byte 2
Read
Byte N
Read Sector
Protection Status2 1
0
AAh 55h 90h
@5555h @2AAAh @5555h
Read Identifier
with (A0,A1,A6)
set to (0,1,0)
Program a Byte of
Flash Memory
1
0
AAh 55h A0h
@5555h @2AAAh @5555h
Data
@ Address
Erase a Sector of
Flash Memory
1
0
AAh 55h 80h
@5555h @2AAAh @5555h
AAh
@5555h
55h
@2AAAh
30h
@ Sector
address
30h
@ Sector
address3
Erase the Whole
of Flash Memory
1
0
AAh 55h 80h
@5555h @2AAAh @5555h
AAh
@5555h
55h 10h
@2AAAh @5555h
Suspend Sector
Erase
B0h
1 0 @any
address
Resume Sector
Erase
30h
1 0 @any
address
EEPROM Power
Down
0
1
AAh 55h 30h
@5555h @2AAAh @5555h
Deep Power
Down
1
0
20h
@5555h
SDP Enable
(EEPROM)
0
1
AAh 55h A0h
@5555h @2AAAh @5555h
Write
Byte 1
Write
Byte 2
Write
Byte N
SDP Disable
(EEPROM)
0
1
AAh 55h 80h
@5555h @2AAAh @5555h
AAh
@5555h
55h 20h
@2AAAh @5555h
Write OTP Row
0
1
AAh 55h B0h
@5555h @2AAAh @5555h
Write
Byte 1
Write
Byte 2
Write
Byte N
Return (from OTP
Read or
EEPROM Power
Down)
0
1
F0h
@any
address
Reset
1
0
AAh
@5555h
55h
@2AAAh
F0h
@any
address
Reset (short
instruction)
F0h
1 0 @any
address
Note: 1. AAh @ 5555h means “Write the value AAh at the address 5555h”.
2. This instruction can also be performed as a Verify operation with A9=VID (please see the section entitled “Flash Sector Protection
and Unprotection” on page 18).
3. Addresses of additional sectors to be erased must be entered within a time-out of 80 µs of each other.
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