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PDF MAT03 Data sheet ( Hoja de datos )
| Número de pieza | MAT03 | |
| Descripción | Low Noise / Matched Dual PNP Transistor | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MAT03 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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FEATURES
Dual Matched PNP Transistor
Low Offset Voltage: 100 V max
Low Noise: 1 nV/√Hz @ 1 kHz max
High Gain: 100 min
High Gain Bandwidth: 190 MHz typ
Tight Gain Matching: 3% max
Excellent Logarithmic Conformance: rBE Ӎ 0.3 ⍀ typ
Available in Die Form
Low Noise, Matched
Dual PNP Transistor
MAT03
PIN CONNECTION
TO-78
(H Suffix)
GENERAL DESCRIPTION
The MAT03 dual monolithic PNP transistor offers excellent
parametric matching and high frequency performance. Low
noise characteristics (1 nV/√Hz max @ 1 kHz), high bandwidth
(190 MHz typical), and low offset voltage (100 µV max), makes
the MAT03 an excellent choice for demanding preamplifier ap-
plications. Tight current gain matching (3% max mismatch) and
high current gain (100 min), over a wide range of collector cur-
rent, makes the MAT03 an excellent choice for current mirrors.
A low value of bulk resistance (typically 0.3 Ω) also makes the
MAT03 an ideal component for applications requiring accurate
logarithmic conformance.
Each transistor is individually tested to data sheet specifications.
Device performance is guaranteed at 25°C and over the extended
industrial and military temperature ranges. To insure the long-
term stability of the matching parameters, internal protection
diodes across the base-emitter junction clamp any reverse base-
emitter junction potential. This prevents a base-emitter break-
down condition which can result in degradation of gain and
matching performance due to excessive breakdown current.
REV. B
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 617/329-4700
Fax: 617/326-8703
1 page  
MAT03
Figure 7. Saturation Voltage
vs. Collector Current
Figure 8. Noise Voltage Density
vs. Frequency
Figure 9. Noise Voltage Density
Figure 10. Total Noise vs. Collector Current
Figure 11. Collector-Base Capacitance vs. VCB
REV. B
–5–
5 Page 
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
TO-78 Metal Can
0.185 (4.70)
0.165 (4.19)
0.040 (1.02) MAX
0.045 (1.14)
0.010 (0.25)
REFERENCE PLANE
0.750 (19.05)
0.500 (12.70)
0.250 (6.35) MIN 0.100 (2.54) BSC
0.050 (1.27) MAX
4
0.160 (4.06)
0.110 (2.79)
0.200
(5.08)
BSC
3
2
5 0.045 (1.14)
6 0.027 (0.69)
0.019 (0.48)
0.016 (0.41)
0.021 (0.53)
0.016 (0.41)
0.100
(2.54)
BSC
BASE & SEATING PLANE
1
0.034 (0.86)
0.027 (0.69)
45° BSC
MAT03
REV. B
–11–
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MAT03.PDF ] | |
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