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PDF MASWSS0033TR Data sheet ( Hoja de datos )

Número de pieza MASWSS0033TR
Descripción GaAs SP3T 2.5V High Power Switch DC - 2.5 GHz
Fabricantes Tyco 
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GaAs SP3T 2.5V High Power Switch
DC - 2.5 GHz
Feb 12 2002
Preliminary
Features
Low Harmonic Knee Voltage < 2.5V
Low Harmonics > 65 dBc at +34 dBm & 1 GHz
Low Insertion Loss 0.45 dB at 1 GHz
High Isolation 18.5 dB at 2 GHz
FQFP 12-lead 3x3mm Low Profile Package
0.5 micron GaAs pHEMT Process
Description
M/A-COM’s MASWSS0033 is a GaAs PHEMT MMIC
SP3T high power switch in a low cost miniature FQFP
12-lead 3x3mm thin profile package. This package
represents a lower profile than standard FQFP style,
featuring a 0.8mm maximum thickness.
The MASWSS0033 is ideally suited for applications
where high power, low control voltage, low insertion
loss, high isolation, small size and low cost are re-
quired. Typical applications are for GSM and DCS
handset systems that connect separate transmit and
receive functions to a common antenna, as well othe
handset and related applications. This part can be
used in all systems operating up to 2.5 GHz requiring
high power at low control voltage.
The MASWSS0033 is fabricated using a 0.5 micron
gate length GaAs PHEMT process. The process fea-
tures full passivation for performance and reliability.
Absolute Maximum Ratings 1
Parameter
Max Input Power (0.5 - 2.5 GHz,
2.5V Control)
Operating Voltage
Operating Temperature
Storage Temperature
Absolute
Maximum
+38 dBm
+8.5 volts
-40 oC to +85 oC
-65 oC to +150 oC
1. Exceeding any one or combination of these limits may
cause permanent damage.
Functional Schematic
PIN 1
V3
RF3
100 pF
GND
V1
RF1
100 pF
GND
Pin Configuration
PIN PIN Name
No.
1 V3
2 RF3
3 GND
4 GND
5 RF2
6 V2
7 GND
8 RF1
9 V1
10 GND
11 ANT
12 GND
13 GND (paddle)
Description
Control 3
RF Port 3
RF Ground
RF Ground
RF Port 2
Control 2
RF Ground
RF Port 1
Control 1
RF Ground
Antenna Port
RF Ground
RF Ground

1 page




MASWSS0033TR pdf
GaAs SP3T 2.5V High Power Switch
Handling Procedures
The following precautions should be observed to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are ESD sensitive
and can be damaged by static electricity. Proper ESD
techniques should be used when handling these devices.
Ordering Information
Part Number
MASWSS0033
MASWSS0033TR
MASWSS0033SMB
Package
FQFP-N 12-lead Thin Plastic Package
1000 piece reel
Sample Test Board
MASWSS0033
V 1.04
Specifications subject to change without notice.
„ North America: Tel. (800) 366-2266, Fax (800) 618-8883
„ Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
„ Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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