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Numéro de référence | MAC320A6FP | ||
Description | ISOLATED TRIACs THYRISTORS 20 AMPERES RMS 200 thru 800 VOLTS | ||
Fabricant | Motorola Semiconductors | ||
Logo | |||
1 Page
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as solid-state relays,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Gate Triggering Guaranteed in Three Modes (MAC320FP Series) or
Four Modes (MAC320AFP Series)
Order this document
by MAC320FP/D
MAC320FP
Series
MAC320AFP
Series
ISOLATED TRIACs
THYRISTORS
20 AMPERES RMS
200 thru 800 VOLTS
MT2 MT1
G
CASE 221C-02
STYLE 3
MAXIMUM RATINGS (TC = 25°C unless otherwise noted.)
Rating
Peak Repetitive Off-State Voltage(1) (TJ = –40 to +125°C,
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC320-4FP, MAC320A4FP
MAC320-6FP, MAC320A6FP
MAC320-8FP, MAC320A8FP
MAC320-10FP, MAC320A10FP
Symbol
VDRM
Value
200
400
600
800
Unit
Volts
Peak Gate Voltage
On-State RMS Current (TC = +75°C, Full Cycle Sine Wave 50 to 60 Hz)(2)
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +75°C,
preceded and followed by rated current)
VGM
IT(RMS)
ITSM
10
20
150
Volts
Amps
Amps
Peak Gate Power (TC = +75°C, Pulse Width = 2 µs)
Average Gate Power (TC = +75°C, t = 8.3 ms)
Peak Gate Current
pRMS Isolation Voltage (TA = 25°C, Relative Humidity 20%)
Operating Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
PGM
PG(AV)
IGM
V(ISO)
TJ
Tstg
20
0.5
2
1500
–40 to +125
–40 to +150
Watts
Watt
Amps
Volts
°C
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC 1.8 °C/W
Thermal Resistance, Case to Sink
RθCS
2.2 (typ)
°C/W
Thermal Resistance, Junction to Ambient
RθJA 60 °C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the
plastic body.
Motorola Thyristor Device Data
© Motorola, Inc. 1995
1
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Pages | Pages 6 | ||
Télécharger | [ MAC320A6FP ] |
No | Description détaillée | Fabricant |
MAC320A6FP | ISOLATED TRIACs THYRISTORS 20 AMPERES RMS 200 thru 800 VOLTS | Motorola Semiconductors |
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