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MAC320A4 fiches techniques PDF

Motorola Semiconductors - TRIACs 20 AMPERES RMS 200 thru 800 VOLTS

Numéro de référence MAC320A4
Description TRIACs 20 AMPERES RMS 200 thru 800 VOLTS
Fabricant Motorola Semiconductors 
Logo Motorola Semiconductors 





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MAC320A4 fiche technique
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as solid-state relays,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
Blocking Voltage to 800 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Gate Triggering Guaranteed in Three Modes (MAC320 Series) or Four Modes
(MAC320A Series)
Order this document
by MAC320/D
MAC320
Series
MAC320A
Series
TRIACs
20 AMPERES RMS
200 thru 800 VOLTS
MT1
MT2 G
MAXIMUM RATINGS (TC = 25°C unless otherwise noted.)
Rating
Peak Repetitive Off-State Voltage(1) (TJ = –40 to +125°C,
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC320-4, MAC320A4
MAC320-6, MAC320A6
MAC320-8, MAC320A8
MAC320-10, MAC320A10
Symbol
VDRM
CASE 221A-04
(TO-220AB)
STYLE 4
Value
200
400
600
800
Unit
Volts
Peak Gate Voltage
On-State Current RMS (TC = +75°C)
(Full Cycle, Sine Wave, 50 to 60 Hz)
VGM
IT(RMS)
10
20
Volts
Amp
Peak Surge Current (One Full Cycle, 60 Hz, TC = +75°C)
preceded and followed by rated current
ITSM 150 Amp
Peak Gate Power (TC = +75°C, Pulse Width = 2 µs)
Average Gate Power (TC = +75°C, t = 8.3 ms)
Peak Gate Current
Operating Junction Temperature Range
Storage Temperature Range
THERMAL CHARACTERISTICS
PGM
PG(AV)
IGM
TJ
Tstg
20
0.5
2
–40 to +125
–40 to +150
Watts
Watt
Amp
°C
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC 1.8 °C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Motorola Thyristor Device Data
© Motorola, Inc. 1995
1

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