MAC212A6FP Datasheet PDF - Motorola Semiconductors
| Part Number | MAC212A6FP | |
| Description | ISOLATED TRIACs THYRISTORS 12 AMPERES RMS 200 thru 800 VOLTS | |
| Manufacturers | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MAC212FP/D
Triacs
Silicon Bidirectional Thyristors
MAC212FP
Series
MAC212AFP
Series
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Gate Triggering Guaranteed in Three Modes (MAC212FP Series) or
Four Modes (MAC212AFP Series)
MT2 MT1
G
ISOLATED TRIACs
THYRISTORS
12 AMPERES RMS
200 thru 800 VOLTS
CASE 221C-02
STYLE 3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Symbol
Value
Unit
Repetitive Peak Off-State Voltage(1) (TJ = –40 to +125°C,
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC212-4FP, MAC212A4FP
MAC212-6FP, MAC212A6FP
MAC212-8FP, MAC212A8FP
MAC212-10FP, MAC212A10FP
VDRM
200
400
600
800
Volts
On-State RMS Current (TC = +85°C) Full Cycle Sine Wave 50 to 60 Hz(2)
IT(RMS)
12
Amps
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +85°C)
preceded and followed by rated current
ITSM 100 Amps
Circuit Fusing (t = 8.3 ms)
I2t 40 A2s
Peak Gate Power (TC = +85°C, Pulse Width = 10 µs)
Average Gate Power (TC = +85°C, t = 8.3 ms)
PGM
PG(AV)
20
0.35
Watts
Watt
Peak Gate Current (TC = +85°C, Pulse Width = 10 µs)
pRMS Isolation Voltage (TA = 25°C, Relative Humidity 20%)
IGM
V(ISO)
2
1500
Amps
Volts
Operating Junction Temperature
TJ –40 to +125 °C
Storage Temperature Range
Tstg –40 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC 2.1 °C/W
Thermal Resistance, Case to Sink
RθCS
2.2 (typ)
°C/W
Thermal Resistance, Junction to Ambient
RθJA 60 °C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic
body.
Motorola Thyristor Device Data
© Motorola, Inc. 1995
1
|
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MAC212FP Series MAC212AFP Series
PACKAGE DIMENSIONS
–B–
P
–T–
SEATING
PLANE
FC
S
N
H
–Y–
Q
Z
G
1 23
A
E
K
LJ
D 3 PL
0.25 (0.010) M B M Y
R
STYLE 3:
PIN 1.
2.
3.
MT 1
MT 2
GATE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD DIMENSIONS UNCONTROLLED WITHIN
DIMENSION Z.
INCHES
DIM MIN MAX
A 0.680 0.700
B 0.388 0.408
C 0.175 0.195
D 0.025 0.040
E 0.340 0.355
F 0.140 0.150
G 0.100 BSC
H 0.110 0.155
J 0.018 0.028
K 0.500 0.550
L 0.045 0.070
N 0.049 –––
P 0.270 0.290
Q 0.480 0.500
R 0.090 0.120
S 0.105 0.115
Z 0.070 0.090
MILLIMETERS
MIN MAX
17.28 17.78
9.86 10.36
4.45 4.95
0.64 1.01
8.64 9.01
3.56 3.81
2.54 BSC
2.80 3.93
0.46 0.71
12.70 13.97
1.15 1.77
1.25 –––
6.86 7.36
12.20 12.70
2.29 3.04
2.67 2.92
1.78 2.28
CASE 221C-02
Motorola Thyristor Device Data
5
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| Information | Total 6 Pages | |
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Featured Datasheets
| Part Number | Description | MFRS |
| MAC212A6FP | The function is ISOLATED TRIACs THYRISTORS 12 AMPERES RMS 200 thru 800 VOLTS. Motorola Semiconductors | |
| MAC212A6FP | The function is Triacs. ON Semiconductor |  |
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