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Motorola Semiconductors - ISOLATED TRIACs THYRISTORS 10 AMPERES RMS 200 thru 800 VOLTS

Numéro de référence MAC210-6FP
Description ISOLATED TRIACs THYRISTORS 10 AMPERES RMS 200 thru 800 VOLTS
Fabricant Motorola Semiconductors 
Logo Motorola Semiconductors 





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MAC210-6FP fiche technique
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MAC210FP/D
Triacs
Silicon Bidirectional Thyristors
MAC210FP
Series
MAC210AFP
Series
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
Blocking Voltage to 800 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Gate Triggering Guaranteed in Three Modes (MAC210FP Series)
or Four Modes (MAC210AFP Series)
MT2 MT1
G
ISOLATED TRIACs
THYRISTORS
10 AMPERES RMS
200 thru 800 VOLTS
CASE 221C-02
STYLE 3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Repetitive Peak Off-State Voltage(1) (TJ = –40 to +125°C)
1/2 Sine Wave 50 to 60 Hz, Gate Open
MAC210-4FP, MAC210A4FP
MAC210-6FP, MAC210A6FP
MAC210-8FP, MAC210A8FP
MAC210-10FP, MAC210A10FP
On-State RMS Current (TC = +70°C) Full Cycle Sine Wave 50 to 60 Hz(2)
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +70°C)
preceded and followed by rated current
Symbol
VDRM
IT(RMS)
ITSM
Value
200
400
600
800
10
100
Unit
Volts
Amps
Amps
Circuit Fusing (t = 8.3 ms)
I2t 40 A2s
Peak Gate Power (TC = +70°C, Pulse Width = 10 µs)
Average Gate Power (TC = +70°C, t = 8.3 ms)
Peak Gate Current (TC = +70°C, Pulse Width = 10 µs)
pRMS Isolation Voltage (TA = 25°C, Relative Humidity 20%)
Operating Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
PGM
PG(AV)
IGM
V(ISO)
TJ
Tstg
20
0.35
2
1500
–40 to +125
–40 to +125
Watts
Watt
Amps
Volts
°C
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC 2.2 °C/W
Thermal Resistance, Case to Sink
RθCS
2.2 (typ)
°C/W
Thermal Resistance, Junction to Ambient
RθJA 60 °C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2.ThecasetemperaturereferencepointforallTCmeasurements isapointonthecenterleadofthepackageascloseaspossibletotheplasticbody.
Motorola Thyristor Device Data
© Motorola, Inc. 1995
1

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