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MAC15A10 fiches techniques PDF

Motorola Semiconductors - TRIACs 15 AMPERES RMS 200 thru 800 VOLTS

Numéro de référence MAC15A10
Description TRIACs 15 AMPERES RMS 200 thru 800 VOLTS
Fabricant Motorola Semiconductors 
Logo Motorola Semiconductors 





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MAC15A10 fiche technique
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Triacs
Silicon Bidirectional Triode Thyristors
. . . designed primarily for full-wave ac control applications, such as solid-state relays,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
Blocking Voltage to 800 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Gate Triggering Guaranteed in Three Modes (MAC15 Series) or Four Modes
(MAC15A Series)
MAC15
Series
MAC15A
Series
TRIACs
15 AMPERES RMS
200 thru 800 VOLTS
MT2 MT1
G
CASE 221A-04
(TO-220AB)
STYLE 4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Peak Repetitive Off-State Voltage(1)
(Gate Open, TJ = –40 to +125°C)
MAC15-4, MAC15A4
MAC15-6, MAC15A6
MAC15-8, MAC15A8
MAC15-10, MAC15A10
Symbol
VDRM
Value
200
400
600
800
Unit
Volts
Peak Gate Voltage
On-State Current RMS
Full Cycle Sine Wave 50 to 60 Hz (TC = +90°C)
Circuit Fusing (t = 8.3 ms)
VGM
IT(RMS)
I2t
10
15
93
Volts
Amps
A2s
Peak Surge Current
(One Full Cycle, 60 Hz, TC = +80°C)
Preceded and followed by rated current
ITSM 150 Amps
Peak Gate Power (TC = +80°C, Pulse Width = 2 µs)
Average Gate Power (TC = +80°C, t = 8.3 ms)
Peak Gate Current
Operating Junction Temperature Range
Storage Temperature Range
PGM
PG(AV)
IGM
TJ
Tstg
20
0.5
2
–40 to +125
–40 to +150
Watts
Watt
Amps
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC 2 °C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
REV 1
Motorola Thyristor Device Data
3–59

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