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PDF MAC12M Data sheet ( Hoja de datos )
| Número de pieza | MAC12M | |
| Descripción | TRIACS 12 AMPERES RMS 400 thru 800 VOLTS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MAC12M (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Advance Information
TRIACS
Silicon Bidirectional Thyristors
Designed for high performance full–wave ac control applications where high
noise immunity and commutating di/dt are required.
• Blocking Voltage to 800 Volts
• On-State Current Rating of 12 Amperes RMS at 70°C
• Uniform Gate Trigger currents in Three Modes
• High Immunity to dv/dt — 250 V/µs minimum at 125°C
• High Commutating di/dt — 6.5 A/ms minimum at 125°C
• Industry Standard TO–220 AB Package
• High Surge Current Capability — 120 Amperes
MAC12
SERIES *
*Motorola preferred devices
TRIACS
12 AMPERES RMS
400 thru 800
VOLTS
MT2
MT1
MT2
G
CASE 221A–06
(TO-220AB)
Style 4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Peak Repetitive Off-State Voltage (1)
(TJ = –40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open)
MAC12D
MAC12M
MAC12N
VDRM
Volts
400
600
800
On-State RMS Current
(Full Cycle Sine Wave, 60 Hz, TC = 70°C)
IT(RMS)
12 A
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 125°C)
Circuit Fusing Consideration (t = 8.3 ms)
ITSM
I2t
100 A
41 A2sec
Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C)
Average Gate Power (t = 8.3 ms, TC = 80°C)
Operating Junction Temperature Range
Storage Temperature Range
PGM
PG(AV)
TJ
Tstg
16
0.35
– 40 to +125
– 40 to +150
Watts
Watts
°C
°C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
RθJC
RθJA
2.2 °C/W
62.5
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
TL
260 °C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, Gate Open)
TJ = 25°C
TJ =1 25°C
IDRM
—
—
— 0.01 mA
— 2.0
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Thyristor Device Data
3–53
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MAC12M.PDF ] | |
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