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PDF MAC12HCM Data sheet ( Hoja de datos )

Número de pieza MAC12HCM
Descripción Triacs Silicon Bidirectional Thyristors
Fabricantes ON 
Logotipo ON Logotipo



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MAC12HCD, MAC12HCM,
MAC12HCN
Triacs
Preferred Device
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
motor controls, heating controls or dimmers; or wherever full–wave,
silicon gate–controlled devices are needed.
Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3
High Commutating di/dt and High Immunity to dv/dt @ 125°C
Minimizes Snubber Networks for Protection
Blocking Voltage to 800 Volts
On-State Current Rating of 12 Amperes RMS at 80°C
High Surge Current Capability – 100 Amperes
Industry Standard TO-220AB Package for Ease of Design
Glass Passivated Junctions for Reliability and Uniformity
Device Marking: Logo, Device Type, e.g., MAC12HCD, Date Code
http://onsemi.com
TRIACS
12 AMPERES RMS
400 thru 800 VOLTS
MT2
MT1
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Peak Repetitive Off-State Voltage(1)
(TJ = –40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
MAC12HCD
MAC12HCM
MAC12HCN
VDRM,
VRRM
400
600
800
Unit
Volts
On-State RMS Current
(All Conduction Angles; TC = 80°C)
Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 125°C)
Circuit Fusing Consideration
(t = 8.33 ms)
IT(RMS)
ITSM
I2t
12 A
100 A
41 A2sec
Peak Gate Power
(Pulse Width 1.0 µs, TC = 80°C)
Average Gate Power
(t = 8.3 ms, TC = 80°C)
Operating Junction Temperature Range
PGM
PG(AV)
TJ
16 Watts
0.35 Watts
–40 to
+125
°C
Storage Temperature Range
Tstg
–40 to
°C
+150
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
4
1
2
3
TO–220AB
CASE 221A
STYLE 4
PIN ASSIGNMENT
1 Main Terminal 1
2 Main Terminal 2
3 Gate
4 Main Terminal 2
ORDERING INFORMATION
Device
Package
Shipping
MAC12HCD
TO220AB
50 Units/Rail
MAC12HCM
TO220AB
50 Units/Rail
MAC12HCN
TO220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 2
1
Publication Order Number:
MAC12HC/D

1 page




MAC12HCM pdf
100
TYPICAL @
TJ = 25°C
10
MAC12HCD, MAC12HCM, MAC12HCN
1
MAXIMUM @ TJ = 125°C
0.1
MAXIMUM @ TJ = 25°C
1
0.1
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VT, INSTANTANEOUS ONĆSTATE VOLTAGE (VOLTS)
Figure 7. Typical On-State Characteristics
0.01
0.1
1 10 100 1000 10000
t, TIME (ms)
Figure 8. Typical Thermal Response
http://onsemi.com
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