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MA786WK fiches techniques PDF

Panasonic - Silicon epitaxial planar type

Numéro de référence MA786WK
Description Silicon epitaxial planar type
Fabricant Panasonic 
Logo Panasonic 





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MA786WK fiche technique
Schottky Barrier Diodes (SBD)
MA3X786D
Silicon epitaxial planar type
For super-high speed switching circuit
For small current rectification
0.65 ± 0.15
+ 0.2
2.8 0.3
+ 0.25
1.5 0.05
Unit : mm
0.65 ± 0.15
I Features
Two MA3X786s are contained in one package (anode common)
Allowing to rectify under (IF(AV) = 100 mA) condition
Optimum for high-frequency rectification because of its short
reverse recovery time (trr)
Low VF (forward rise voltage), with high rectification efficiency
1
3
2
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Repetitive peak reverse voltage
Peak forward
current
Single
Double*2
VR
VRRM
IFM
30
30
300
200
V
V
mA
Average forward Single
current
Double*2
IF(AV)
100
70
mA
Non-repetitive peak forward
surge current*1
IFSM
1
A
Junction temperature
Tj 125 °C
Storage temperature
Tstg 55 to +125
°C
Note) *1 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
*2 : Value per chip
0.1 to 0.3
0.4 ± 0.2
1 : Cathode 1
2 : Cathode 2 JEDEC : TO-236
3 : Anode 1, 2 EIAJ : SC-59
Mini Type Package(3-pin)
Marking Symbol: M3Y
Internal Connection
1
3
2
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR VR = 30 V
VF IF = 100 mA
Ct VR = 0 V, f = 1 MHz
trr IF = IR = 100 mA
Irr = 10 mA, RL = 100
15
0.55
20
2
µA
V
pF
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 250 MHz
3. * : trr measuring circuit
Bias Application Unit N-50BU
Input Pulse
Output Pulse
tr tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50
W.F.Analyzer
(SAS-8130)
Ri = 50
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100
1

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