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Numéro de référence | MA728 | ||
Description | Schottky Barrier Diodes (SBD) | ||
Fabricant | Panasonic | ||
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1 Page
Schottky Barrier Diodes (SBD)
MA2J728
Silicon epitaxial planar type
For super-high speed switching circuit
For wave detection circuit
I Features
• Sealed in the S-mini (2-pin) mold and super small type
• Low forward rise voltage (VF) and satisfactory wave detection
efficiency (η)
• Extremely low reverse current IR
• Small temperature coefficient of forward characteristic
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
Peak reverse voltage
Peak forward current
Forward current (DC)
Junction temperature
Storage temperature
VR
VRM
IFM
IF
Tj
Tstg
30
30
150
30
125
−55 to +125
Unit
V
V
mA
mA
°C
°C
Unit : mm
KA
21
0.4 ± 0.1
1.7 ± 0.1
2.5 ± 0.2
0.4 ± 0.1
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
Marking Symbol: 2A
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
IR VR = 30 V
VF1 IF = 1 mA
VF2 IF = 30 mA
Ct VR = 1 V, f = 1 MHz
300
0.4
1.0
1.5
nA
V
V
pF
Reverse recovery time*
trr IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
1.0 ns
Detection efficiency
η Vin = 3 V(peak), f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
65 %
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring instrument
Bias Applicaiton Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
Input Pulse
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 Ω
1
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Pages | Pages 2 | ||
Télécharger | [ MA728 ] |
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