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Panasonic - Schottky Barrier Diodes (SBD)

Numéro de référence MA728
Description Schottky Barrier Diodes (SBD)
Fabricant Panasonic 
Logo Panasonic 





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MA728 fiche technique
Schottky Barrier Diodes (SBD)
MA2J728
Silicon epitaxial planar type
For super-high speed switching circuit
For wave detection circuit
I Features
Sealed in the S-mini (2-pin) mold and super small type
Low forward rise voltage (VF) and satisfactory wave detection
efficiency (η)
Extremely low reverse current IR
Small temperature coefficient of forward characteristic
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
Peak reverse voltage
Peak forward current
Forward current (DC)
Junction temperature
Storage temperature
VR
VRM
IFM
IF
Tj
Tstg
30
30
150
30
125
55 to +125
Unit
V
V
mA
mA
°C
°C
Unit : mm
KA
21
0.4 ± 0.1
1.7 ± 0.1
2.5 ± 0.2
0.4 ± 0.1
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
Marking Symbol: 2A
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
IR VR = 30 V
VF1 IF = 1 mA
VF2 IF = 30 mA
Ct VR = 1 V, f = 1 MHz
300
0.4
1.0
1.5
nA
V
V
pF
Reverse recovery time*
trr IF = IR = 10 mA
Irr = 1 mA, RL = 100
1.0 ns
Detection efficiency
η Vin = 3 V(peak), f = 30 MHz
RL = 3.9 k, CL = 10 pF
65 %
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring instrument
Bias Applicaiton Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50
W.F.Analyzer
(SAS-8130)
Ri = 50
Input Pulse
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100
1

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