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PDF MA714 Data sheet ( Hoja de datos )

Número de pieza MA714
Descripción Silicon epitaxial planar type
Fabricantes Panasonic 
Logotipo Panasonic Logotipo



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No Preview Available ! MA714 Hoja de datos, Descripción, Manual

Schottky Barrier Diodes (SBD)
MA4X714
Silicon epitaxial planar type
For switching circuits
For wave detection circuit
0.65 ± 0.15
2.8
+
0.2
0.3
1.5
+
0.25
0.05
Unit : mm
0.65 ± 0.15
I Features
Two MA3X704As are contained in one package (Two diodes in a
different direction)
Optimum for low-voltage rectification because of its low forward
rise voltage (VF)
Optimum for high-frequency rectification because of its short re-
verse recovery time (trr)
I Absolute Maximum Ratings Ta = 25°C
Parameter
Reverse voltage (DC)
Peak forward
current
Single
Double*
Forward current Single
(DC)
Double*
Junction temperature
Storage temperature
Note) * : Value per chip
Symbol
VR
IFM
IF
Tj
Tstg
Rating
30
150
110
30
20
125
55 to +125
Unit
V
mA
mA
°C
°C
0.5 R
41
2
3
0.1 to 0.3
0.4 ± 0.2
1 : Cathode 1
2 : Anode 2
3 : Cathode 2
4 : Anode 1
Mini Type Package (4-pin)
Marking Symbol: M1P
Internal Connection
41
32
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR VR = 30 V
VF1 IF = 1 mA
VF2 IF = 30 mA
Ct VR = 1 V, f = 1 MHz
trr IF = IR = 10 mA
Irr = 1 mA, RL = 100
1
0.4
1.0
1.5
1.0
µA
V
V
pF
ns
Detection efficiency
η Vin = 3 V(peak), f = 30 MHz
RL = 3.9 k, CL = 10 pF
65 %
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring instrument Bias Aplication Unit N-50BU
Input Pulse
Output Pulse
tr tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50
W.F.Analyzer
(SAS-8130)
Ri = 50
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100
1

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