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PDF MA4X796 Data sheet ( Hoja de datos )
| Número de pieza | MA4X796 | |
| Descripción | Silicon epitaxial planar type | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Schottky Barrier Diodes (SBD)
MA4X796
Silicon epitaxial planar type
For super-high speed switching circuit
For small current rectification
0.65 ± 0.15
2.8
+
−
0.2
0.3
+ 0.25
1.5 − 0.05
Unit : mm
0.65 ± 0.15
I Features
• Two MA3X787s in the same direction are contained in one package
• Allowing to rectify under (IF(AV) = 100 mA) condition
• Optimum for high-frequency rectification because of its short
reverse recovery time (trr)
• Low VF (forward rise voltage), with high rectification efficiency
• Reverse voltage VR (DC value) = 50 V guaranteed
I Absolute Maximum Ratings Ta = 25°C
0.5 R
41
2
3
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Repetitive peak reverse voltage
Peak forward
current
Single
Double*2
VR
VRRM
IFM
50
50
300
200
V
V
mA
Average forward Single
current
Double*2
IF(AV)
100
70
mA
Non-repetitive peak forward
surge current*1
IFSM
1
A
Junction temperature
Tj 125 °C
Storage temperature
Tstg −55 to +125
°C
Note) *1 : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
*2 : Value per chip
0.1 to 0.3
0.4 ± 0.2
1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1
Mini Type Package (4-pin)
Marking Symbol: M4B
Internal Connection
41
32
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR VR = 50 V
VF IF = 100 mA
Ct VR = 0 V, f = 1 MHz
trr IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
30
0.55
25
3
µA
V
pF
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 200 MHz
3. * : trr measuring circuit Bias Application Unit N-50BU
Input Pulse
Output Pulse
tr tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MA4X796.PDF ] | |
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