|
|
PDF MA4X713 Data sheet ( Hoja de datos )
| Número de pieza | MA4X713 | |
| Descripción | Schottky Barrier Diodes (SBD) | |
| Fabricantes | Panasonic | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MA4X713 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
|
No Preview Available !
Schottky Barrier Diodes (SBD)
MA4X713 (MA713)
Silicon epitaxial planar type
For switching
For wave detection
I Features
• Two isolated elements are contained in one package, allowing
high-density mounting
• Two MA3X704A (MA704A) is contained in one package (of a
type in the same direction)
• Low forward voltage VF , optimum for low voltage rectification
• Optimum for high frequency rectification because of its short
reverse recovery time (trr)
• Mini type 4-pin package
2.90+–00..0052
1.9±0.2
(0.95) (0.95)
34
(0.2)
0.60+–00..0150
2
10°
0.5R
1
Unit: mm
0.16+–00..016
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Reverse voltage (DC)
Peak forward
Single
current
Double *
VR
IFM
30
150
110
Unit
V
mA
1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1
EIAJ : SC-61
Mini4-G1 Package
Marking Symbol: M1N
Forward current (DC) Single
Double *
Junction temperature
Storage temperature
IF 30 mA
20
Tj 125
Tstg −55 to +125
°C
°C
Internal Connection
3
4
Note) *: Value per chip
I Electrical Characteristics Ta = 25°C
21
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time *
Detection efficiency
IR VR = 30 V
VF1 IF = 1 mA
VF2 IF = 30 mA
Ct VR = 1 V, f = 1 MHz
trr IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
η Vin = 3 V(peak) , f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
1
0.4
1.0
1.5
1.0
65
µA
V
pF
ns
%
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 200 MHz 3. *: trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
Output Pulse
tr tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
Publication date: August 2001
SKH00103AED
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MA4X713.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MA4X713 | Silicon epitaxial planar type | Panasonic |
| MA4X713 | Schottky Barrier Diodes (SBD) | Panasonic |
| MA4X714 | Silicon epitaxial planar type | Panasonic |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |