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Numéro de référence | MA4X159A | ||
Description | Silicon epitaxial planar type | ||
Fabricant | Panasonic | ||
Logo | |||
1 Page
Switching Diodes
MA4X159A
Silicon epitaxial planar type
For switching circuits
I Features
• Two isolated elements contained in one package, allowing high-
density mounting
• Short reverse recovery time trr
• Small terminal capacitance, Ct
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
Repetitive peak reverse voltage
Average forward
current
Single
Double
Repetitive peak
forward current
Single
Double
Non-repetitive peak Single
forward surge current* Double
Junction temperature
Storage temperature
VR
VRRM
IF(AV)
IF(AV)
IFRM
IFRM
IFSM
IFSM
Tj
Tstg
80
80
100
75
225
170
500
375
150
−55 to +150
Note) * : t = 1 s
Unit
V
V
mA
mA/Unit
mA
mA/Unit
mA
mA/Unit
°C
°C
Unit : mm
0.65 ± 0.15
2.8
+
−
0.2
0.3
1.5
+
−
0.25
0.05
0.65 ± 0.15
0.5 R
41
2
3
0.1 to 0.3
0.4 ± 0.2
1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1
Mini Type Package (4-pin)
Marking Symbol: M1B
Internal Connection
41
32
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Reverse recovery time*
IR VR = 75 V
VF IF = 100 mA
VR IR = 100 µA
Ct VR = 0 V, f = 1 MHz
trr IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100 Ω
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
Bias Application Unit N-50BU
Input Pulse
tr tp
10%
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Min Typ Max
0.1
0.95 1.2
80
0.9 2
3
Output Pulse
IF
trr
t
Irr = 0.1 · IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
Unit
µA
V
V
pF
ns
1
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Pages | Pages 2 | ||
Télécharger | [ MA4X159A ] |
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