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Numéro de référence | MA3Z070 | ||
Description | Silicon epitaxial planar type | ||
Fabricant | Panasonic | ||
Logo | |||
Band Switching Diodes
MA3Z070
Silicon epitaxial planar type
For a band selection switch of an electronic tuner
I Features
• Low forward dynamic resistance rf
• Less voltage dependence of diode capacitance CD
• S-mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
0.425
2.1 ± 0.1
1.25 ± 0.1
0.425
Unit : mm
1
3
2
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
Forward current (DC)
Operating ambient temperature*
Storage temperature
VR 35
IF 100
Topr −25 to +85
Tstg −55 to +150
Note) * : Maximum ambient temperature during operation
Unit
V
mA
°C
°C
0.2 ± 0.1
1 : Anode 1
2 : Cathode 2
3 : Anode 2
Cathode 1 EIAL : SC-70
S-Mini Type Package (3-pin)
Marking Symbol: M3S
Internal Connection
1
3
2
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max
Reverse current (DC)
Forward voltage (DC)
Diode capacitance
Forward dynamic resistance*
IR VR = 33 V
VF IF = 100 mA
CD VR = 6 V, f = 1 MHz
rf IF = 2 mA, f = 100 MHz
0.01 100
0.92 1.0
0.9 1.2
0.65 0.85
Note) 1 Each characteristic is a standard for individual diodes
2 Rated input/output frequency: 100 MHz
3 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
Unit
nA
V
pF
Ω
1
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Pages | Pages 2 | ||
Télécharger | [ MA3Z070 ] |
No | Description détaillée | Fabricant |
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