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PDF MA3XD14E Data sheet ( Hoja de datos )
| Número de pieza | MA3XD14E | |
| Descripción | Silicon epitaxial planar type (cathode common) | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Schottky Barrier Diodes (SBD)
MA3XD14E
Silicon epitaxial planar type (cathode common)
For high-speed switching circuits
I Features
• Mini type 3-pin package
• Low forward rise voltage VF (VF < 0.4 V)
• Cathode common type
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Repetitive peak reverse voltage
Non-repetitive peak forward
surge current*2
VR
VRRM
IFSM
20
20
1
V
V
A
Forward current Single
(DC)
Double*1
IF
100 mA
70
Peak forward
Single
IFM
300
mA
current
Double*1
200
Junction temperature
Tj 125 °C
Storage temperature
Tstg −55 to +125
°C
Note) *1 : The value for operating one chip
*2 : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
0.65 ± 0.15
+ 0.2
2.8 − 0.3
+ 0.25
1.5 − 0.05
Unit : mm
0.65 ± 0.15
1
3
2
0.1 to 0.3
0.4 ± 0.2
1 : Anode 1
2 : Anode 2
3 : Cathode 1
Cathode 2
Mini Type Package (3-pin)
Marking Symbol: M5H
Internal Connection
1
3
2
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR VR = 10 V
VF1 IF = 5 mA
VF2 IF = 100 mA
Ct VR = 0 V, f = 1 MHz
trr IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
20
0.27
0.40
25
3.0
µA
V
V
pF
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 250 MHz
3. * : trr measuring circuit
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
Input Pulse
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MA3XD14E.PDF ] | |
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