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PDF MA3X730 Data sheet ( Hoja de datos )
| Número de pieza | MA3X730 | |
| Descripción | Silicon epitaxial planar type | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Schottky Barrier Diodes (SBD)
MA3X730
Silicon epitaxial planar type
For UHF mixer
I Features
• Two MA2X707s are contained in the (Mini (3-pin) type)
• Large conversion gain (GC)
• Small forward voltage VF
• Optimum for the UHF band mixer
0.65 ± 0.15
+ 0.2
2.8 − 0.3
+ 0.25
1.5 − 0.05
Unit : mm
0.65 ± 0.15
1
3
2
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Forward voltage (DC)
Reverse voltage (DC)
Junction temperature
Storage temperature
VF 0.5
VR 5
Tj 125
Tstg −55 to +125
Unit
V
V
°C
°C
0.1 to 0.3
0.4 ± 0.2
1 : Anode 1
2 : Cathode 2
3 : Cathode 1 JEDEC : TO-236
Anode 2
EIAJ : SC-59
Mini Type Package (3-pin)
Marking Symbol: M2X
Internal Connection
1
3
2
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward current (DC)
Reverse current (DC)
Forward voltage (DC)
Reverse breakdown voltage (DC)
Terminal capacitance
Conversion gain*1,2
IF
IR
VF
V(BR)R
Ct
GC
VF = 0.5 V
VR = 5 V
IF = 2 mA
IR = 1 mA
VR = 0.5 V, f = 1 MHz
RF = 890 MHz, LO = 935 MHz
IF = 45 MHz
35 100
35
0.25
5
0.65 0.85 1.05
−7 −5
mA
µA
V
V
pF
dB
Static breakdown strength
C = 100 pF, Breakdown judgment
point IR ≥ 35 µA
100 200
V
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 935 MHz
3. Noise index is 8.5 dB
4. Each characteristic is a standard for individual diodes
5. *1 : Judgement is to be made per each chip lot. Sampling of LTPD = 20% and n = 11 is guaranteed.
*2 : Set min. GC = −7 dB. Out-spec products, if any, this specification would be reviewed
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MA3X730.PDF ] | |
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