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MA3X704A fiches techniques PDF

Panasonic - Silicon epitaxial planar type

Numéro de référence MA3X704A
Description Silicon epitaxial planar type
Fabricant Panasonic 
Logo Panasonic 





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MA3X704A fiche technique
Schottky Barrier Diodes (SBD)
MA3X704, MA3X704A
Silicon epitaxial planar type
For switching circuits
For wave detection circuit
I Features
Low forward rise voltage (VF) and satisfactory wave detection
efficiency (η)
Small temperature coefficient of forward characteristic
Extremely low reverse current IR
0.65 ± 0.15
+ 0.2
2.8 0.3
+ 0.25
1.5 0.05
Unit : mm
0.65 ± 0.15
1
3
2
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
0.1 to 0.3
0.4 ± 0.2
Reverse voltage MA3X704
(DC)
MA3X704A
Peak reverse
voltage
MA3X704
MA3X704A
Peak forward current
Forward current (DC)
Junction temperature
Storage temperature
VR
VRM
IFM
IF
Tj
Tstg
15
30
15
30
150
30
125
55 to +125
V
V
mA
mA
°C
°C
1 : Anode
2 : NC
JEDEC : TO-236
3 : Cathode EIAJ : SC-59
Mini Type Package (3-pin)
Marking Symbol
MA3X704 : M1K MA3X704A : M1L
Internal Connection
1
3
I Electrical Characteristics Ta = 25°C
2
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC) MA3X704
MA3X704A
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR
VF1
VF2
Ct
trr
VR = 15 V
VR = 30 V
IF = 1 mA
IF = 30 mA
VR = 1 V, f = 1 MHz
IF = IR = 10 mA
Irr = 1 mA, RL = 100
200
300
0.4
1
1.5
1
nA
V
V
pF
ns
Detection efficiency
η Vin = 3 V(peak), f = 30 MHz
RL = 3.9 k, CL = 10 pF
65 %
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
tr tp
10%
t
A
Pulse Generator
(PG-10N)
Rs = 50
W.F.Analyzer
(SAS-8130)
Ri = 50
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100
1

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