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PDF MA3X558 Data sheet ( Hoja de datos )
| Número de pieza | MA3X558 | |
| Descripción | Silicon epitaxial planar type | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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PIN Diodes
MA3X558
Silicon epitaxial planar type
For UHF and SHF bands AGC
0.65 ± 0.15
+ 0.2
2.8 − 0.3
+ 0.25
1.5 − 0.05
Unit : mm
0.65 ± 0.15
I Features
• Small diode capacitance CD
• Large variable range of forward dynamic resistance rf
• Mini type package, allowing downsizing of equipment and auto-
matic insertion through the taping package and magazine package
1
3
2
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
Peak reverse voltage
Forward current (DC)
Power dissipation
Operating ambient temperature*
Storage temperature
VR
VRM
IF
PD
Topr
Tstg
40
45
100
150
−25 to +85
−55 to +150
Note) * : Maximum ambient temperature during operation
Unit
V
V
mA
mW
°C
°C
0.1 to 0.3
0.4 ± 0.2
1 : Anode 1
2 : Anode 2
JEDEC : TO-236
3 : Cathode 1,2 EIAJ : SC-59
Mini Type Package (3-pin)
Marking Symbol: M4C
Internal Connection
1
3
2
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max
Reverse current (DC)
Forward voltage (DC)
Diode capacitance
Forward dynamic resistance*
IR VR = 40 V
VF IF = 100 mA
CD VR = 15 V, f = 1 MHz
rf1 IF = 10 µA, f = 100 MHz
rf2 IF = 10 mA, f = 100 MHz
100
1.05 1.2
0.3 0.5
12
6 10
Note) 1 Rated input/output frequency: 100 MHz
2. Each characteristic is a standard for individual diode
3 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
Unit
nA
V
pF
kΩ
Ω
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MA3X558.PDF ] | |
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