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MA3X157A fiches techniques PDF

Panasonic - Silicon epitaxial planar type

Numéro de référence MA3X157A
Description Silicon epitaxial planar type
Fabricant Panasonic 
Logo Panasonic 





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MA3X157A fiche technique
Switching Diodes
MA3X157A
Silicon epitaxial planar type
For switching circuits
I Features
High switching speed
Small terminal capacitance, Ct
Both chips have even characteristics
Can be connected in series
0.65 ± 0.15
+ 0.2
2.8 0.3
+ 0.25
1.5 0.05
Unit : mm
0.65 ± 0.15
1
3
2
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
Peak reverse voltage
Forward current
(DC)
Single
Series
VR
VRM
IF
80
80
100
65
Repetitive peak
forward current
Single
Series
IFRM
225
145
Non-repetitive peak Single
forward surge current* Series
IFSM
500
325
Junction temperature
Storage temperature
Tj 150
Tstg 55 to +150
Note) * : t = 1 s
Unit
V
V
mA
mA
mA
°C
°C
0.1 to 0.3
0.4 ± 0.2
1 : Anode 1
2 : Cathode 2
3 : Anode 2
JEDEC : TO-236
Cathode 1 EIAJ : SC-59
Mini Type Package (3-pin)
Marking Symbol: MS
Internal Connection
1
3
2
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Reverse recovery time*
IR VR = 75 V
VF IF = 100 mA
VR IR = 100 µA
Ct VR = 0 V, f = 1 MHz
trr IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
Bias Application Unit N-50BU
Input Pulse
tr tp
10%
t
A
Pulse Generator
(PG-10N)
Rs = 50
W.F.Analyzer
(SAS-8130)
Ri = 50
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Min Typ Max
0.1
1.2
80
2
3
Output Pulse
IF
trr
t
Irr = 0.1 · IR
IF = 10 mA
VR = 6 V
RL = 100
Unit
µA
V
V
pF
ns
1

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