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Numéro de référence | MA3X057 | ||
Description | Silicon epitaxial planar type | ||
Fabricant | Panasonic | ||
Logo | |||
Band Switching Diodes
MA3X057
Silicon epitaxial planar type
For band switching
0.65 ± 0.15
+ 0.2
2.8 − 0.3
+ 0.25
1.5 − 0.05
Unit : mm
0.65 ± 0.15
I Features
• Low forward dynamic resistance rf
• Less voltage dependence of diode capacitance CD
• Mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
VR 35
Forward current (DC)
IF 100
Operating ambient temperature*
Topr −25 to +85
Storage temperature
Tstg −55 to +150
Note) * : Maximum ambient temperature during operation
Unit
V
mA
°C
°C
1
3
2
0.1 to 0.3
0.4 ± 0.2
1 : Anode
2 : NC
JEDEC : TO-236
3 : Cathode EIAJ : SC-59A
Mini Type Package (3-pin)
Marking Symbol: MX
Internal Connection
1
3
2
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max
Reverse current (DC)
Forward voltage (DC)
Diode capacitance
Forward dynamic resistance*
IR VR = 33 V
VF IF = 100 mA
CD VR = 15 V, f = 1 MHz
rf IF = 3 mA, f = 100 MHz
0.01 100
0.88 1.0
1.3 2.0
0.78 1.15
Note) 1 Rated input/output frequency: 100 MHz
2. * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
Unit
nA
V
pF
Ω
1
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Pages | Pages 2 | ||
Télécharger | [ MA3X057 ] |
No | Description détaillée | Fabricant |
MA3X057 | Silicon epitaxial planar type | Panasonic |
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