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Numéro de référence | MA3V175E | ||
Description | Silicon epitaxial planar type | ||
Fabricant | Panasonic | ||
Logo | |||
Switching Diodes
MA3V175E, MA3V176E
Silicon epitaxial planar type
For switching circuits
4.0 ± 0.2
Unit : mm
I Features
• Short reverse recovery time trr
• Small terminal capacitance, Ct
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage MA3V175E
(DC)
MA3V176E
VR
40
80
Peak reverse
voltage
MA3V175E
MA3V176E
VRM
40
80
Forward current Single
(DC)
Double
IF
100
150
Peak forward
current
Single
Double
IFM
225
340
Non-repetitive peak Single
forward surge current* Double
IFSM
500
750
Junction temperature
Storage temperature
Tj 150
Tstg −55 to +150
Note) * : t = 1 s
Unit
V
V
mA
mA
mA
°C
°C
marking
123
1.27 1.27
2.54 ± 0.15
1 : Anode
2 : Cathode
3 : Anode
New S-Type Package
Internal Connection
123
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Reverse current (DC) MA3V175E
MA3V176E
IR
Forward voltage (DC)
Reverse voltage (DC) MA3V175E
MA3V176E
VF
VR
Terminal capacitance
Reverse recovery time*
Ct
trr
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
DUT
Conditions
VR = 35 V
VR = 75 V
IF = 100 mA
IR = 100 µA
VR = 0 V, f = 1 MHz
IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100Ω
Input Pulse
tr tP
Rs = 50 Ω
V = VR + IR·RS
IF
Sampling
Oscilloscope
Ri = 50 Ω
10%
90%
tp = 100 ns
tr = 0.6 ns
δ = 0.05
Min Typ Max Unit
0.1 µA
0.1
1.2 V
40 V
80
4 pF
3 ns
Output Pulse
trr
0 IF
t
Irr = 0.1·IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
1
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Pages | Pages 2 | ||
Télécharger | [ MA3V175E ] |
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