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PDF MA3S795E Data sheet ( Hoja de datos )
| Número de pieza | MA3S795E | |
| Descripción | Silicon epitaxial planar type | |
| Fabricantes | Panasonic | |
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Schottky Barrier Diodes (SBD)
MA3S795E
Silicon epitaxial planar type
For switching circuits
1.60 ± 0.1
0.80 0.80 ± 0.05
Unit : mm
I Features
• Extra-small (SS-mini type) package, allowing high-density mount-
ing
• Optimum for low voltage rectification because of its low VF (VF =
0.3 V or less at IF = 1 mA)
• Optimum for high-frequency rectification because of its short
reverse recovery time (trr)
1
3
2
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
For switching circuits
Peak forward
current
Single
Double*
VR
VRM
IFM
30
30
150
110
Forward current Single
(DC)
Double*
IF
30
20
Junction temperature
Storage temperature
Note) * : Value per chip
Tj 125
Tstg −55 to +125
Unit
V
V
mA
mA
°C
°C
0.44 0.44
+ 0.05
0.88 − 0.03
1 : Anode 1
2 : Anode 2
3 : Carhode 1
Cathode 2
SS-Mini Type Package (3-pin)
Marking Symbol: M3D
Internal Connection
1
3
2
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR VR = 30 V
VF1 IF = 1 mA
VF2 IF = 30 mA
Ct VR = 1 V, f = 1 MHz
trr IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
30
0.3
1
1.5
1
µA
V
V
pF
ns
Detection efficiency
η Vin = 3 V(peak), f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
65 %
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring circuit
Bias Application Unit N-50BU
Input Pulse
Output Pulse
tr tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 Ω
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MA3S795E.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MA3S795 | Silicon epitaxial planar type | Panasonic |
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| MA3S795E | Silicon epitaxial planar type | Panasonic |
| MA3S795E | Schottky Barrier Diodes (SBD) | Panasonic |
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