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MA3S795 fiches techniques PDF

Panasonic - Silicon epitaxial planar type

Numéro de référence MA3S795
Description Silicon epitaxial planar type
Fabricant Panasonic 
Logo Panasonic 





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MA3S795 fiche technique
Schottky Barrier Diodes (SBD)
MA3S795
Silicon epitaxial planar type
For switching circuits
1.60 ± 0.1
0.80 0.80 ± 0.05
Unit : mm
I Features
Extra-small SS-mini type 3-pin package, allowing high-density
mounting
Optimum for low-voltage rectification because of its low forward
rise voltage (VF) (Low VF type of MA3X704A)
Optimum for high-frequency rectification because of its short
reverse recovery time (trr)
1
3
2
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
For switching circuits
Forward current (DC)
Peak forward current
Junction temperature
Storage temperature
VR
VRM
IF
IFM
Tj
Tstg
30
30
30
150
125
55 to +125
Unit
V
V
mA
mA
°C
°C
0.44 0.44
0.88
+
0.05
0.03
1 : Anode
2 : NC
3 : Cathode
SS-Mini Type Package(3-pin)
Marking Symbol: M2M
Internal Connection
1
3
2
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR VR = 30 V
VF1 IF = 1 mA
VF2 IF = 30 mA
Ct VR = 1 V, f = 1 MHz
trr IF = IR = 10 mA
Irr = 1 mA, RL = 100
30
0.3
1
1.5
1
µA
V
V
pF
ns
Detection efficiency
η Vin = 3 V(peak), f = 30 MHz
RL = 3.9 k, CL = 10 pF
65 %
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring circuit
Bias Application Unit N-50BU
Input Pulse
Output Pulse
tr tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50
W.F.Analyzer
(SAS-8130)
Ri = 50
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100
1

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