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PDF MA3S781E Data sheet ( Hoja de datos )
| Número de pieza | MA3S781E | |
| Descripción | Silicon epitaxial planar type (cathode common) | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Schottky Barrier Diodes (SBD)
MA3S781E
Silicon epitaxial planar type (cathode common)
For high-speed switching circuits
1.60 ± 0.1
0.80 0.80 ± 0.05
Unit : mm
I Features
• SS-mini type 3-pin package
• Allowing high-density mounting
• Cathode common type
1
3
2
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
Peak reverse voltage
Average forward Single
current
Double
VR
VRM
IF
30
30
30
20
Peak forward
current
Single
Double
IFM
150
110
Junction temperature
Storage temperature
Tj 125
Tstg −55 to +125
Unit
V
V
mA
mA
°C
°C
0.44 0.44
+ 0.05
0.88 − 0.03
1 : Anode 1
2 : Anode 2
3 : Cathode
SS-Mini Type Package (3-pin)
Marking Symbol: M2R
Internal Connection
1
3
2
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR VR = 30 V
VF1 IF = 1 mA
VF2 IF = 30 mA
Ct VR = 1 V, f = 1 MHz
trr IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
1.0
0.4
1.0
1.5
1.0
µA
V
V
pF
ns
Detection efficiency
η Vin = 3 V(peak), f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
65 %
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring circuit
Bias Application Unit N-50BU
Input Pulse
Output Pulse
tr tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 Ω
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MA3S781E.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MA3S781 | Silicon epitaxial planar type | Panasonic |
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