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PDF MA3S781 Data sheet ( Hoja de datos )

Número de pieza MA3S781
Descripción Silicon epitaxial planar type
Fabricantes Panasonic 
Logotipo Panasonic Logotipo



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No Preview Available ! MA3S781 Hoja de datos, Descripción, Manual

Schottky Barrier Diodes (SBD)
MA3S781
Silicon epitaxial planar type
For the switching circuit
1.60 ± 0.1
0.80 0.80 ± 0.05
Unit : mm
I Features
1608 type diode contained in the (SS-mini) package
Surface mounting, allowing high-density mounting
Optimum for high-frequency rectification because of its short
reverse recovery time (trr)
Low VF (forward rise voltage), with high rectification efficiency
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
Peak reverse voltage
Forward current (DC)
Peak forward current
Junction temperature
Storage temperature
VR
VRM
IF
IFM
Tj
Tstg
30
30
30
150
125
55 to +125
Unit
V
V
mA
mA
°C
°C
1
3
2
0.44 0.44
0.88
+
0.05
0.03
1 : Cathode
2 : NC
3 : Anode
SS-Mini Type Package (3-pin)
Marking Symbol: M1L
Internal Connection
1
3
2
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR VR = 30 V
VF1 IF = 1 mA
VF2 IF = 30 mA
Ct VR = 1 V, f = 1 MHz
trr IF = IR = 10 mA
Irr = 1 mA, RL = 100
300
0.4
1
1.5
1.0
nA
V
V
pF
ns
Detection efficiency
η Vin = 3 V(peak), f = 30 MHz
RL = 3.9 k, CL = 10 pF
65 %
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring circuit
Bias Application Unit N-50BU
Input Pulse
Output Pulse
tr tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50
W.F.Analyzer
(SAS-8130)
Ri = 50
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100
1

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