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MA3S132K fiches techniques PDF

Panasonic - Silicon epitaxial planar type

Numéro de référence MA3S132K
Description Silicon epitaxial planar type
Fabricant Panasonic 
Logo Panasonic 





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MA3S132K fiche technique
Switching Diodes
MA3S132K
Silicon epitaxial planar type
For switching circuits
Unit : mm
1.60 ± 0.1
0.80 0.80 ± 0.05
I Features
Short reverse recovery time trr
Small terminal capacitance, Ct
Super-small SS-mini type package, allowing high-density mount-
ing
1
3
2
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
Peak reverse voltage
Forward current (DC)
Peak forward current
Non-repetitive peak forward
surge current*
VR
VRM
IF
IFM
IFSM
80
80
100
225
500
Junction temperature
Storage temperature
Note) * : t = 1 s
Tj 150
Tstg 55 to +150
Unit
V
V
mA
mA
mA
°C
°C
0.44 0.44
0.88
+
0.05
0.03
1 : Anode
2 : NC
3 : Cathode
SS-Mini Type Package (3-pin)
Marking Symbol: MI
Internal Connection
1
3
2
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Reverse recovery time*
IR
VF
VR
Ct
trr
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
Conditions
VR = 75 V
IF = 100 mA
IR = 100 µA
VR = 0 V, f = 1 MHz
IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100
Bias Application Unit N-50BU
Input Pulse
tr tp
10%
t
A
Pulse Generator
(PG-10N)
Rs = 50
38 W.F.Analyzer
(SAS-8130)
Ri = 50
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Min Typ Max
100
1.2
80
2
3
Output Pulse
IF
trr
t
Irr = 0.1 · IR
IF = 10 mA
VR = 6 V
RL = 100
Unit
nA
V
V
pF
ns
1

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