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PDF MA3J745D Data sheet ( Hoja de datos )
| Número de pieza | MA3J745D | |
| Descripción | Silicon epitaxial planar type | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Schottky Barrier Diodes (SBD)
MA3J745D
Silicon epitaxial planar type
For switching circuits
0.425
2.1 ± 0.1
1.25 ± 0.1
Unit : mm
0.425
I Features
• Optimum for low-voltage rectification because of its low forward
rise voltage (VF)
• Optimum for high-frequency rectification because of its short
reverse recovery time (trr)
1
3
2
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
Peak reverse voltage
Forward current Single
(DC)
Double*
VR
VRM
IF
30
30
30
20
Peak forward
current
Single
Double*
IFM
150
110
Junction temperature
Storage temperature
Tj 125
Tstg −55 to +125
Note) * : Value per chip
Unit
V
V
mA
mA
°C
°C
1 : Cathode 1
2 : Cathode 2
3 : Anode 1, 2
EIAJ : SC-70
Flat S-Mini Type Package (3-pin)
Marking Symbol: M3E
Internal Connection
1
3
2
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR VR = 30 V
VF1 IF = 1 mA
VF2 IF = 30 mA
Ct VR = 1 V, f = 1 MHz
trr IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
30
0.3
1.0
1.5
1.0
µA
V
V
pF
ns
Detection efficiency
η Vin = 3 V(peak), f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
65 %
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
Output Pulse
tr tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 Ω
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MA3J745D.PDF ] | |
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