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MA3J741D fiches techniques PDF

Panasonic - Silicon epitaxial planar type

Numéro de référence MA3J741D
Description Silicon epitaxial planar type
Fabricant Panasonic 
Logo Panasonic 





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MA3J741D fiche technique
Schottky Barrier Diodes (SBD)
MA3J741D, MA3J741E
Silicon epitaxial planar type
For switching circuits
0.425
2.1 ± 0.1
1.25 ± 0.1
Unit : mm
0.425
I Features
Two MA3J741s are contained in one package (S-mini type 3-pin)
Low forward rise voltage (VF) and satisfactory wave detection
efficiency (η)
Small temperature coefficient of forward characteristic
Extremely low reverse current IR
1
3
2
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
Peak reverse voltage
Forward current Single
(DC)
Double*
VR
VRM
IF
30
30
30
20
Peak forward
current
Single
Double*
IFM
150
110
Junction temperature
Storage temperature
Note) * : Value per hcip
Tj 125
Tstg 55 to +125
Unit
V
V
mA
mA
°C
°C
EIAJ : SC-70
Flat S-Mini Type Package
(3-pin)
Marking Symbol
MA3J741D : M2P
MA3J741E : M2R
Internal Connection
MA3J741D MA3J741E
1 Cathode 1 Anode 1
2 Cathode 2 Anode 2
3 Anode 1,2 Cathode 1,2
11
33
22
I Electrical Characteristics Ta = 25°C
DE
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR VR = 30 V
VF1 IF = 1 mA
VF2 IF = 30 mA
Ct VR = 1 V, f = 1 MHz
trr IF = IR = 10 mA
Irr = 1 mA, RL = 100
1
0.4
1
1.5
1
µA
V
V
pF
ns
Detection efficiency
η Vin = 3 V(peak), f = 30 MHz
RL = 3.9 k, CL = 10 pF
65 %
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring instrument Bias Application Unit N-50BU
Input Pulse
Output Pulse
tr tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50
W.F.Analyzer
(SAS-8130)
Ri = 50
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100
1

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