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Número de pieza | MA3J142D | |
Descripción | Silicon epitaxial planar type | |
Fabricantes | Panasonic | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MA3J142D (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Switching Diodes
MA3J142D
Silicon epitaxial planar type
For switching circuits
I Features
• Small S-mini type package contained two elements, allowing
high-density mounting
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
Peak reverse voltage
Forward current
(DC)
Single
Double
VR
VRM
IF
80
80
100
150
Peak forward
current
Single
Double
IFM
225
340
Non-repetitive peak Single
forward surge current* Double
IFSM
500
750
Junction temperature
Storage temperature
Tj 150
Tstg −55 to +150
Note) * : t = 1 s
Unit
V
V
mA
mA
mA
°C
°C
0.425
2.1 ± 0.1
1.25 ± 0.1
Unit : mm
0.425
1
3
2
1 : Cathode 1
2 : Cathode 2
3 : Anode 1
Anode 2
Flat S-Mini Type Package (3-pin)
Marking Symbol: MO
Internal Connection
1
3
2
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Reverse recovery time*
IR
VF
VR
Ct
trr
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
Conditions
VR = 75 V
IF = 100 mA
IR = 100 µA
VR = 0 V, f = 1 MHz
IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100 Ω
Bias Application Unit N-50BU
Input Pulse
tr tp
10%
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Min Typ Max
100
1.2
80
15
10
Output Pulse
IF
trr
t
Irr = 0.1 · IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
Unit
nA
V
V
pF
ns
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet MA3J142D.PDF ] |
Número de pieza | Descripción | Fabricantes |
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MA3J142D | Silicon epitaxial planar type | Panasonic |
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MA3J142K | Silicon epitaxial planar type | Panasonic |
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