(PDF) MA3D799 Datasheet - Silicon epitaxial planar type (cathode common)

Número de pieza	MA3D799
Descripción	Silicon epitaxial planar type (cathode common)
Fabricantes	Panasonic
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No Preview Available ! Schottky Barrier Diodes (SBD) MA3D799 Silicon epitaxial planar type (cathode common) For switching power supply 9.9 ± 0.3 Unit : mm 4.6 ± 0.2 2.9 ± 0.2 I Features • TO-220D package • Allowing to rectify under (IF(AV) = 10 A) condition • Cathode common dual type • Low VF (forward voltage) type: VF < 0.47 V(at IF = 5 A) I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Repetitive peak reverse voltage Average forward current VRRM IF(AV) 30 10 Non-repetitive peak forward surge current* IFSM 120 Junction temperature Tj Storage temperature Tstg Note) * : Half sine-wave; 10 ms/cycle −40 to +125 −40 to +125 Unit V A A °C °C φ 3.2 ± 0.1 1.4 ± 0.2 1.6 ± 0.2 0.8 ± 0.1 2.54 ± 0.3 1 2 3 5.08 ± 0.5 2.6 ± 0.1 0.55 ± 0.15 1 : Anode 2 : Cathode(common) 3 : Anode TO-220D package I Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) Forward voltage (DC) IR VR = 30 V VF IF = 5 A 3 mA 0.47 V High voltage rectification Rth(j-c) Direct current (between junction and case) 3 °C/W Note) Rated input/output frequency: 150 MHz 1 1 page

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