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Numéro de référence | MA3D799 | ||
Description | Silicon epitaxial planar type (cathode common) | ||
Fabricant | Panasonic | ||
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Schottky Barrier Diodes (SBD)
MA3D799
Silicon epitaxial planar type (cathode common)
For switching power supply
9.9 ± 0.3
Unit : mm
4.6 ± 0.2
2.9 ± 0.2
I Features
• TO-220D package
• Allowing to rectify under (IF(AV) = 10 A) condition
• Cathode common dual type
• Low VF (forward voltage) type: VF < 0.47 V(at IF = 5 A)
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Repetitive peak reverse voltage
Average forward current
VRRM
IF(AV)
30
10
Non-repetitive peak forward
surge current*
IFSM
120
Junction temperature
Tj
Storage temperature
Tstg
Note) * : Half sine-wave; 10 ms/cycle
−40 to +125
−40 to +125
Unit
V
A
A
°C
°C
φ 3.2 ± 0.1
1.4 ± 0.2
1.6 ± 0.2
0.8 ± 0.1
2.54 ± 0.3
1 2 3 5.08 ± 0.5
2.6 ± 0.1
0.55 ± 0.15
1 : Anode
2 : Cathode(common)
3 : Anode
TO-220D package
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
IR VR = 30 V
VF IF = 5 A
3 mA
0.47 V
High voltage rectification
Rth(j-c)
Direct current (between junction and case)
3 °C/W
Note) Rated input/output frequency: 150 MHz
1
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Pages | Pages 2 | ||
Télécharger | [ MA3D799 ] |
No | Description détaillée | Fabricant |
MA3D798 | Silicon epitaxial planar type (cathode common) | Panasonic |
MA3D799 | Silicon epitaxial planar type (cathode common) | Panasonic |
MA3D799 | Silicon epitaxial planar type (cathode common) | Panasonic |
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