(PDF) MA3D756 Datasheet - Silicon epitaxial planar type (cathode common)

Número de pieza	MA3D756
Descripción	Silicon epitaxial planar type (cathode common)
Fabricantes	Panasonic
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No Preview Available ! Schottky Barrier Diodes (SBD) MA3D756 Silicon epitaxial planar type (cathode common) For switching power supply 9.9 ± 0.3 Unit : mm 4.6 ± 0.2 2.9 ± 0.2 I Features • Low forward rise voltage VF • TO-220D (Full-pack package) with high dielectric breakdown voltage > 5.0 kV • Easy-to-mount, caused by its V cut lead end I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Repetitive peak reverse voltage Average forward current VRRM IF(AV) 60 10 Non-repetitive peak forward surge current* IFSM 120 Junction temperature Storage temperature Tj −40 to +125 Tstg −40 to +125 Note) * : Half sine-wave; 10 ms/cycle Unit V A A °C °C φ 3.2 ± 0.1 1.4 ± 0.2 1.6 ± 0.2 0.8 ± 0.1 2.54 ± 0.3 1 2 3 5.08 ± 0.5 2.6 ± 0.1 0.55 ± 0.15 Internal Connection 1 : Anode 2 : Cathode 3 : Anode TO-220D Package 123 I Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) Forward voltage (DC) Thermal resistance IR VF Rth(j-c) VR = 60 V IF = 5 A Direct current (between junction and case) 3 mA 0.58 V 3 °C/W Note) Rated input/output frequency: 150 MHz 1 1 page

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PDF MA3D756 Data sheet ( Hoja de datos )