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MA3D755 fiches techniques PDF

Panasonic - Silicon epitaxial planar type (cathode common)

Numéro de référence MA3D755
Description Silicon epitaxial planar type (cathode common)
Fabricant Panasonic 
Logo Panasonic 





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MA3D755 fiche technique
Schottky Barrier Diodes (SBD)
MA3D755
Silicon epitaxial planar type (cathode common)
For switching power supply
9.9 ± 0.3
Unit : mm
4.6 ± 0.2
2.9 ± 0.2
I Features
Low forward rise voltage VF
TO-220D (Full-pack package) with high dielectric breakdown
voltage > 5.0 kV
Easy-to-mount, caused by its V cut lead end
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Repetitive peak reverse voltage
Average forward current
VRRM
IF(AV)
60
5
Non-repetitive peak forward
surge current*
IFSM
90
Junction temperature
Storage temperature
Tj 40 to +125
Tstg 40 to +125
Note) * : Half sine-wave; 10 ms/cycle
Unit
V
A
A
°C
°C
φ 3.2 ± 0.1
1.4 ± 0.2
1.6 ± 0.2
0.8 ± 0.1
2.54 ± 0.3
1 2 3 5.08 ± 0.5
2.6 ± 0.1
0.55 ± 0.15
Internal Connection
1 : Anode
2 : Cathode
3 : Anode
TO-220D Package
123
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Thermal resistance
IR
VF
Rth(j-c)
VR = 60 V
IF = 2.5 A
Direct current (between junction and case)
1 mA
0.58 V
3 °C/W
Note) Rated input/output frequency: 200 MHz
1

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