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MA3100W fiches techniques PDF

Panasonic - Silicon planer type

Numéro de référence MA3100W
Description Silicon planer type
Fabricant Panasonic 
Logo Panasonic 





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MA3100W fiche technique
Zener Diodes Composite Elements
MA3100W
Silicon planer type
Constant voltage, constant current, waveform
cripper and surge absorption circuit
s Features
q Mini type package (4-pin)
q Two-element wiring in parallel of MA3100
MA111
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
Unit : mm
0.65±0.15
0.5R
41
2
3
s Absolute Maximum Ratings (Ta= 25˚C)
Parameter
Average forward current
Single
Double
Instanious forward current
Single
Double
Single
Total power dissipation
Double
Non-repetitive reverse surge power dissipation
Junction temperature
Storage temperature
*1 With a printed-circuit board
*2 t=100µ s, Tj=125˚C
Symbol
IF(AV)
IF(AV)
IFRM
IFRM
Ptot*1
Ptot*1
PZSM*2
Tj
Tstg
Rating
100
75
200
150
150
110
15
125
– 55 to + 125
Unit
mA
mA
mA
mA
mW
mW
W
˚C
˚C
0.1 to 0.3
0.4±0.2
1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1
Mini Type Package (4-pin)
s Internal Connection
41
32
s Electrical Characteristics (Ta= 25˚C)*1
Parameter
Symbol
Condition
min
Forward voltage
Zener voltage
Operating resistance
Reverse current
Temperature coefficient of zener voltage
Terminal capacitance
VF
VZ*2
RZK
RZ
IR1
IR2
SZ*3
Ct
IF=10mA
IZ= 5mA
IZ= 0.5mA
IZ= 5mA
VR= 7V
VR= 8.9V
IZ= 5mA
VR= 0V, f=1MHz
9.4
4.5
Note 1. Rated input/output frequency : 5MHz
2. * 1 : The VZ value is for the temperature of 25˚C. In other cases, carry out the temperature compensation.
* 2 : Guaranteeed at 20ms after power application
* 3 : Tj= 25 to 125˚C
typ
0.8
10.0
8
6.4
70
max Unit
0.9 V
10.6 V
130
20
0.2 µA
60 µA
8.0 mV/˚C
90 pF
s Marking
10W

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