|
|
Numéro de référence | MA2ZV05 | ||
Description | Silicon epitaxial planar type | ||
Fabricant | Panasonic | ||
Logo | |||
1 Page
Variable Capacitance Diodes
MA2ZV05
Silicon epitaxial planar type
For VCO
I Features
• Good linearity and large capacitance-ratio in CD VR relation
• Small series resistance rD
• S-mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
Junction temperature
Storage temperature
VR 6
Tj 150
Tstg −55 to +150
Unit
V
°C
°C
INDICATES
CATHODE
Unit : mm
0.4 ± 0.15
12
0.4 ± 0.15
1.7 ± 0.1
2.5 ± 0.2
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
Marking Symbol: 8B
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Reverse current (DC)
Diode capacitance
Capacitance ratio
Series resistance*
IR
CD(1V)
CD(4V)
CD(1V)/CD(4V)
rD
VR = 5 V
VR = 1 V, f = 1 MHz
VR = 4 V, f = 1 MHz
VR = 4 V, f = 470 MHz
18.5
3.6
4.7
Note) 1 Rated input/output frequency: 470 MHz
2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
Typ Max
10
20.5
4.1
0.65
Unit
nA
pF
pF
Ω
1
|
|||
Pages | Pages 2 | ||
Télécharger | [ MA2ZV05 ] |
No | Description détaillée | Fabricant |
MA2ZV01 | Silicon epitaxial planar type | Panasonic |
MA2ZV01 | Silicon Epitaxial Planar Diode | Kexin |
MA2ZV01 | Transistor | TY Semiconductor |
MA2ZV02 | Silicon epitaxial planar type | Panasonic |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |