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Numéro de référence | MA2Z720 | ||
Description | Silicon epitaxial planar type | ||
Fabricant | Panasonic | ||
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1 Page
Schottky Barrier Diodes (SBD)
MA2Z720
Silicon epitaxial planar type
For high-frequency rectification
Unit : mm
I Features
• Sealed in S-mini type 2-pin package
• Allowing to rectify under (IF(AV) = 500 mA) condition
• Allowing high-density mounting
21
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
Peak reverse voltage
Average forward current
VR
VRM
IF(AV)
40
40
500
V
V
mA
Non-repetitive peak forward
surge current*
IFSM
2
A
Junction temperature
Storage temperature
Tj 125 °C
Tstg −55 to +150 °C
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
0.4 ± 0.1
1.7 ± 0.1
2.5 ± 0.2
0.4 ± 0.1
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
Marking Symbol: 2L
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR VR = 35 V
VF IF = 500 mA
Ct VR = 0 V, f = 1 MHz
trr IF = IR = 100 mA, Irr = 0.1 IR, RL = 100 Ω
100
0.55
60
5
µA
V
pF
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and leakage of current from the equipment used.
2. Rated input/output frequency: 400 MHz
3. * : trr measuring instrument
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
Input Pulse
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 0.1 · IR
IF = 100 mA
IR = 100 mA
RL = 100 Ω
1
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Pages | Pages 2 | ||
Télécharger | [ MA2Z720 ] |
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