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PDF MA2YD23 Data sheet ( Hoja de datos )
| Número de pieza | MA2YD23 | |
| Descripción | Silicon epitaxial planar type | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Schottky Barrier Diodes (SBD)
MA2YD23
Silicon epitaxial planar type
For high frequency rectification
■ Features
• Forward current (Average) IF(AV) = 1 A rectification is possible
• Low forward voltage VF
• Small reverse current IR
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average) *1
Non-repetitive peak forward
surge current *2
VR
VRRM
IF(AV)
IFSM
25
25
1.0
3
V
V
A
A
Junction temperature
Tj 125 °C
Storage temperature
Tstg −55 to +125 °C
Note) *1: Mounted on an alumina PC board
*2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
1.6±0.1
1
Unit: mm
0.80±0.05
0 to 0.1
2
0.55±0.1
5˚
0.45±0.1
0.16+–00..016
1 : Anode
2 : Cathode
Marking Symbol: 2W
Mini2-F1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
VF1 IF = 0.5 A
0.42 0.47
V
VF2 IF = 1.0 A
0.46 0.55
Reverse current
IR1 VR = 15 V
1.5 20.0 µA
IR2 VR = 20 V
2.5 40.0
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
Publication date: April 2004
SKH00034BED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MA2YD23.PDF ] | |
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