(PDF) MA2X073 Datasheet - Silicon epitaxial planar type

Número de pieza	MA2X073
Descripción	Silicon epitaxial planar type
Fabricantes	Panasonic
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No Preview Available ! Band Switching Diodes MA2X073 Silicon epitaxial planar type For band switching I Features • Low forward dynamic resistance rf • Less voltage dependence of diode capacitance CD • Mini type package, allowing downsizing of equipment and automatic insertion through the taping package I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Reverse voltage (DC) VR 35 Forward current (DC) IF 100 Operating ambient temperature* Topr −25 to +85 Storage temperature Tstg −55 to +150 Note) * : Maximum ambient temperature during operation Unit V mA °C °C INDICATES CATHODE 1 Unit : mm 2 2.7 + − 0.2 0.1 3.3 ± 0.2 (3. 8 ± 0.2) 5° 5° ( ): WL type 1 : Anode 2 : Cathode Mini Type Package (2-pin) Marking Symbol: 4B I Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Reverse current (DC) Forward voltage (DC) Diode capacitance Forward dynamic resistance* IR VR = 33 V VF IF = 100 mA CD VR = 6 V, f = 1 MHz rf IF = 2 mA, f = 100 MHz 0.01 100 0.92 1 0.9 1.2 0.65 0.85 Note) 1 Rated input/output frequency: 100 MHz 2. * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER Unit nA V pF Ω 1 1 page

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