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PDF MA2SD24 Data sheet ( Hoja de datos )

Número de pieza MA2SD24
Descripción Silicon epitaxial planar type
Fabricantes Panasonic 
Logotipo Panasonic Logotipo



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No Preview Available ! MA2SD24 Hoja de datos, Descripción, Manual

Schottky Barrier Diodes (SBD)
MA2SD24
Silicon epitaxial planar type
For super high speed switching
Features
Forward current (Average) IF(AV) = 200 mA rectification is
possible
Small reverse current IR
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
Repetitive peak reverse voltage
Peak forward current
Forward current (Average)
Non-repetitive peak forward
surge current *
VR
VRRM
IFM
IF(AV)
IFSM
20
20
300
200
1
V
V
mA
mA
A
Junction temperature
Storage temperature
Tj 125 °C
Tstg 55 to +125 °C
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
0.80+–00..0035
1
Unit: mm
0.60+–00..0035
0.12+–00..0025
0.01±0.01
2
0.30±0.05
0+–00.05
1: Anode
2: Cathode
EIAJ: SC-79
SSMini2-F1 Package
Marking Symbol: 5L
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time *
VF IF = 200 mA
IR VR = 10 V
Ct VR = 0 V, f = 1 MHz
trr IF = IR = 100 mA
Irr = 10 mA, RL = 100
0.50 0.58
0.1 1.0
25
3
V
µA
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz.
4. *: trr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
Output Pulse
A
Pulse Generator
(PG-10N)
Rs = 50
Wave Form Analyzer
(SAS-8130)
Ri = 50
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100
Publication date: April 2004
SKH00028BED
1

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