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MA2Q737 fiches techniques PDF

Panasonic - Silicon epitaxial planar type

Numéro de référence MA2Q737
Description Silicon epitaxial planar type
Fabricant Panasonic 
Logo Panasonic 





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MA2Q737 fiche technique
Schottky Barrier Diodes (SBD)
MA2Q737
Silicon epitaxial planar type
For high-frequency rectification
I Features
Forward current (average) IF(AV): 1.5 A type
Reverse voltage (DC value) VR: 30 V
Allowing automatic insertion with the emboss taping
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Repetitive peak reverse voltage
Average forward current*1
VR
VRRM
IF(AV)
30
30
1.5
V
V
A
Non-repetitive peak forward
surge current*2
IFSM
60
A
Junction temperature
Tj 40 to +125 °C
Storage temperature
Tstg 40 to +125
°C
Note) *1 : With a printed-circuit board (copper foil area 2.5 mm × 2.5 mm
+ 0.8 mm × 20 mm or more on both cathode and anode sides)
*2 : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
4.4 ± 0.3
Unit : mm
0 to 0.05
21
1.2 ± 0.4
+ 0.4
5.0 0.1
1.2 ± 0.4
1 : Anode
2 : Cathode
New Mini-Power Type Package (2-pin)
Marking Symbol: PC
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR VR = 30 V
VF IF = 2 A
Ct VR = 10 V, f = 1 MHz
trr IF = IR = 100 mA
Irr = 10 mA, RL = 100
1 mA
0.5 V
70 pF
50 ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 20 MHz
3. * : trr measuring instrument
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50
W.F.Analyzer
(SAS-8130)
Ri = 50
Input Pulse
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100
1

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