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Numéro de référence | MA2HD07 | ||
Description | Schottky Barrier Diodes (SBD) | ||
Fabricant | Panasonic | ||
Logo | |||
Schottky Barrier Diodes (SBD)
MA2HD07
Silicon epitaxial planar type
For high frequency rectification
I Features
• IF(AV) = 1 A rectification is possible
• Half New Mini-power package
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
Repetitive peak reverse-voltage
Average forward current
Non-repetitive peak forward-
surge-current *
VR
VRRM
IF(AV)
IFSM
30
30
1
25
V
V
A
A
Junction temperature
Storage temperature
Tj 125
Tstg −40 to +125
°C
°C
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
1.9±0.1
2
Unit: mm
1.85±0.2
1
8°
0.25+–00..015
1.0±0.2
1 : Anode
2 : Cathode
HNMiniP2-J1 Package
Marking Symbol: PQ
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time *
IR VR = 30 V
VF IF = 1 A
Ct VR = 10 V, f = 1 MHz
trr IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
7 mA
0.37 V
50 pF
15 ns
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 20 MHz
3. *: trr measuring instrument
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
Input Pulse
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
Publication date: August 2001
SKH00010AED
1
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Pages | Pages 3 | ||
Télécharger | [ MA2HD07 ] |
No | Description détaillée | Fabricant |
MA2HD07 | Schottky Barrier Diodes (SBD) | Panasonic |
MA2HD08 | Schottky Barrier Diodes (SBD) | Panasonic |
MA2HD09 | Schottky Barrier Diodes (SBD) | Panasonic |
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