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Numéro de référence | MA2H736 | ||
Description | Schottky Barrier Diodes (SBD) | ||
Fabricant | Panasonic | ||
Logo | |||
1 Page
Schottky Barrier Diodes (SBD)
MA2H736
Silicon epitaxial planar type
For switching circuits
I Features
• Small and thin Half New Mini-power package
• Allowing to rectify under (IF(AV) = 1 A) condition
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Repetitive peak reverse voltage
Average forward current
VR
VRRM
IF(AV)
40
40
1
V
V
A
Non-repetitive peak forward
surge current*
IFSM
30
A
Junction temperature
Storage temperature
Tj 125
Tstg −40 to +125
°C
°C
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
3.2 ± 0.1
Unit : mm
0 to 0.05
21
0.9 ± 0.2
0.9 ± 0.2
3.8 ± 0.2
1 : Anode
2 : Cathode
Half New Mini-Power Package (2-pin)
Marking Symbol: B
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR
VF
Ct
trr
Note) 1. Rated input/output frequency: 20 MHz
2. * : trr measuring instrument
Conditions
VR = 50 V
IF = 1 A
VR = 10 V, f = 1 MHz
IF = IR = 100 mA
Irr = 0.1 · IR, RL = 100 Ω
Min Typ Max Unit
2 mA
0.55 V
50 pF
30 ns
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
Input Pulse
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 0.1 · IR
IF = 100 mA
IR = 100 mA
RL = 100 Ω
1
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Pages | Pages 2 | ||
Télécharger | [ MA2H736 ] |
No | Description détaillée | Fabricant |
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