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PDF MA2H735 Data sheet ( Hoja de datos )
| Número de pieza | MA2H735 | |
| Descripción | Schottky Barrier Diodes (SBD) | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Schottky Barrier Diodes (SBD)
MA2H735
Silicon epitaxial planar type
For switching circuits
I Features
• Small and thin Half New Mini-power package
• Allowing to rectify under (IF(AV) = 1 A) condition
• Low VF (forward voltage) type: VF > 0.5 V at IF = 1 A
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Repetitive peak reverse voltage
Average forward current
VR
VRRM
IF(AV)
30
30
1
V
V
A
Non-repetitive peak forward
surge current*
IFSM
30
A
Junction temperature
Tj 125 °C
Storage temperature
Tstg −40 to +125
°C
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
3.2 ± 0.1
Unit : mm
0 to 0.05
21
0.9 ± 0.2
0.9 ± 0.2
3.8 ± 0.2
1 : Anode
2 : Cathode
Half New Mini-Power Package
Marking Symbol: A
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR
VF
Ct
trr
Note) 1. Rated input/output frequency: 20 MHz
2. * : trr measuring instrument
Conditions
VR = 30 V
IF = 1 A
VR = 10 V, f = 1 MHz
IF = IR = 100 mA
Irr = 0.1 · IR, RL = 100 Ω
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
Input Pulse
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 0.1 · IR
IF = 100 mA
IR = 100 mA
RL = 100 Ω
Min Typ Max Unit
1 mA
0.50 V
50 pF
30 ns
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MA2H735.PDF ] | |
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