(PDF) MA2D755 Datasheet - Schottky Barrier Diodes

Número de pieza	MA2D755
Descripción	Schottky Barrier Diodes
Fabricantes	Panasonic
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No Preview Available ! Schottky Barrier Diodes (SBD) MA2D755 Silicon epitaxial planar type For switching power supply I Features • TO-220D Package • Allowing to rectify under (IF(AV) = 5 A) condition • VR = 60 V guaranteed • Single type I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Repetitive peak reverse voltage Average forward current VRRM IF(AV) 60 5 V A Non-repetitive peak forward surge current* IFSM 90 A Junction temperature Tj −40 to +125 °C Storage temperature Tstg −40 to +125 °C Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) 9.9 ± 0.3 Unit : mm 4.6 ± 0.2 2.9 ± 0.2 φ 3.2 ± 0.1 1.4 ± 0.2 0.8 ± 0.1 5.08 ± 0.5 2.54 ± 0.3 12 2.6 ± 0.1 0.55 ± 0.15 1 : Cathode 2 : Anode TO-220D Package (2-pin) I Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) Forward voltage (DC) Thermal resistance IR VF Rth(j-c) VR = 60 V IF = 5 A Direct current (between junction and case) 3 mA 0.58 V 3 °C/W Note) Rated input/output frequency: 150 kHz 1 1 page

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PDF MA2D755 Data sheet ( Hoja de datos )