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PDF MA2B170 Data sheet ( Hoja de datos )
| Número de pieza | MA2B170 | |
| Descripción | Silicon epitaxial planar type | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Switching Diodes
MA2B170, MA2B171
Silicon epitaxial planar type
For high-speed switching circuits
I Features
• Large forward current IF(AV)
• High switching speed
• Small terminal capacitance, Ct
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage MA2B170
(DC)
MA2B171
VR
40
80
Repetitive peak
reverse voltage
MA2B170
MA2B171
VRRM
40
80
Average forward current
Repetitive peak forward current
Non-repetitive peak
forward surge current*
IF(AV)
IFRM
IFSM
200
600
1
Junction temperature
Storage temperature
Note) * : t = 1 s
Tj 200
Tstg −55 to +200
Unit
V
V
mA
mA
A
°C
°C
φ 0.56 max.
COLORED BAND
INDICATES
CATHODE
1
Unit : mm
1st Band
2nd Band
2
φ 1.95 max.
1 : Cathode
2 : Anode
JEDEC : DO-35
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Reverse current (DC) MA2B170
MA2B171
IR1
MA2B170
MA2B171
IR2
MA2B170
MA2B171
IR
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
VF
Ct
trr
Note) 1. Rated input/output frequency: 100 MHz
Conditions
VR = 15 V
VR = 35 V
VR = 75 V
VR = 35 V, Ta = 150°C
VR = 75 V, Ta = 150°C
IF = 200 mA
VR = 0 V, f = 1 MHz
IF = 10 mA, VR = 1 V
Irr = 0.1 · IR, RL = 100 Ω
2. * : trr measuring circuit
I Cathode Indication
Type No.
MA2B170 MA2B171
Color 1st Band Violet
Violet
2nd Band White
Green
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
Min Typ Max Unit
50 nA
500 nA
500
100 µA
100
1.1 V
4 pF
20 ns
Input Pulse
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 0.1 · IR
IF = 10 mA
VR = 1 V
RL = 100 Ω
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MA2B170.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MA2B170 | Silicon epitaxial planar type | Panasonic |
| MA2B171 | Silicon epitaxial planar type | Panasonic |
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