|
|
Numéro de référence | MA2B064 | ||
Description | Silicon planar type trigger device | ||
Fabricant | Panasonic | ||
Logo | |||
Trigger Devices
MA2B064
Silicon planar type trigger device
Thyristor element
I Features
• Satisfactory symmetry of VBO
• Large VO and small IBO
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Average total power dissipation
Peak current*1
Operating ambient temperature*2
P(AV)
IPM
Topr
150
2.0
100
Storage temperature
Tstg −55 to +125
Note) *1 : Ta < 50°C, t = 10 µs, repetitive frequency 60 Hz
*2 : Maximum ambient temperature during operation
Unit
mW
A
°C
°C
φ 0.56 max.
Unit : mm
φ 1.95 max.
DO-35 Package
Marking Symbol: MA2B064
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Breakover current
Breakover voltage*1
Output voltage*1
Temperature coefficient of
breakover voltage
IBO V = VBO
VBO
I = IBO
VO
50 µA
28 36 V
47
V
0.1 %/°C
Breakover voltage deviation*2
∆VBO
Note) 1. Rated input/output frequency: 100 MHz
2. *1 : Measurement of VBO and VO
*2 : Symmetry of VBO
3.5 V
VBO
30 kΩ 70 kΩ
100 Vrms
0.068 µF
V
O
20 Ω
VBO'
VBO
1
|
|||
Pages | Pages 2 | ||
Télécharger | [ MA2B064 ] |
No | Description détaillée | Fabricant |
MA2B064 | Silicon planar type trigger device | Panasonic |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |